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9/27/11 IRLTS6342PBF hexfet power mosfet notes through are on page 2 features and benefits www.irf.com 1 applications ?
tsop-6 features resulting benefits industry-standard tsop-6 packa g e multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen ? environmentally friendlier msl1, consumer qualification increased reliability note form quantit y irlts6342trpbf tsop-6 ta p e and reel 3000 orderable part number package type standard pack g d d s d d 3 1 2 4 6 5 absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear deratin g factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.0 0.02 1.3 max. 8.3 6.7 64 12 30 v a w c v ds 30 v v gs 12 v r ds(on) max (@v gs = 4.5v) 17.5 m r ds(on) max (@v gs = 2.5v) 22.0 m q g (typical) 11 nc i d (@t a = 25c) 8.3 a

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. when mounted on 1 ich square copper board. r is measured at t j of approximately 90c. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 23 ??? mv/c r ds(on) ??? 14.0 17.5 ??? 17.5 22.0 v gs ( th ) gate threshold voltage 0.5 ??? 1.1 v v ds = v gs , i d = 10 a v gs(th) gate threshold voltage coefficient ??? -4.3 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 25 ??? ??? s q g total gate charge ??? 11 ??? q gs gate-to-source charge ??? 0.5 ??? q gd gate-to-drain charge ??? 4.6 ??? r g gate resistance ??? 2.2 ??? t d(on) turn-on delay time ??? 5.4 ??? t r rise time ???11??? t d(off) turn-off delay time ??? 32 ??? t f fall time ??? 15 ??? c iss input capacitance ??? 1010 ??? c oss output capacitance ??? 96 ??? c rss reverse transfer capacitance ??? 70 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 13 20 ns q r r reverse recovery charge ??? 5.8 8.7 nc thermal resistance parameter units r ja junction-to-ambient c/w max. 62.5 typ. ??? static drain-to-source on-resistance a ??? ??? ??? ??? 2.0 64 na nc ns pf r g = 6.8 v ds = 10v, i d = 6.4a v ds = 24v, v gs = 0v, t j = 125c v dd = 15v, v gs = 4.5v i d = 6.4a v ds = 15v v gs = 12v v gs = -12v v gs = 4.5v m a t j = 25c, i f = 6.4a, v dd = 24v di/dt = 100/ s t j = 25c, i s = 8.3a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol i d = 6.4a v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 8.3a v gs = 2.5v, i d = 6.7a conditions see figs. 18 ? = 1.0mhz v gs = 0v v ds = 25v

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 2.5v 2.0v 1.7v 1.6v 1.5v bottom 1.4v 60 s pulse width tj = 150c 1.4v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 2.5v 2.0v 1.7v 1.6v 1.5v bottom 1.4v 60 s pulse width tj = 25c 1.4v 1.0 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 6.4a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.3a v gs = 4.5v

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 8. maximum safe operating area fig 9. maximum drain current vs. ambient temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t a , ambient temperature (c) 0.0 2.0 4.0 6.0 8.0 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 10 a i d = 250 a i d = 1.0ma 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 0.1 1.0 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100 sec 1msec 10msec dc

www.irf.com 5 fig 13. typical on-resistance vs. drain current fig 12. on-resistance vs. gate voltage fig 15. typical power vs. time fig 14. maximum avalanche energy vs. drain current fig 16. for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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1e-8 1e-7 1e-6 1e-5 1e-4 1e-3 time (sec) 0 4000 8000 12000 16000 p o w e r ( w ) 0 10 20 30 40 50 i d , drain current (a) 0 10 20 30 40 50 60 70 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 2.5v vgs = 4.5v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 90 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.9a 1.5a bottom 6.4a 1 2 3 4 5 6 7 8 9 10 11 12 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 35 40 45 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 8.0a t j = 25c t j = 125c

6 www.irf.com fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 19a. switching time test circuit fig 19b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s '( 1 ) $
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www.irf.com 7 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ tsop-6 part marking information tsop-6 package outline w = (1-26) if preceded by last digit of calendar year w = (27-52) if prece ded by a le t t er code top part number w = we e k y = year lot f = irf5801 (as shown here) indicates lead-free. note: a l i ne above the wor k week a = s i3443dv b = irf 5800 g = irf 5803 d = ir f 5851 e = irf 5852 i = irf5805 c = i r f 58 50 n = irf 5802 k = irf 5810 part number code reference: j = irf 5806 h = irf5804 8 2008 2 2002 02 year 2001 y 1 wor k 01 we e k 5 2005 2003 2004 3 4 2006 2007 6 7 04 03 b w a c d c c 2003 29 2009 2010 9 0 25 24 26 y year 2001 2002 a b we e k wor k 28 27 y x z w a b j 2009 f 2006 2004 2005 d e 2007 2008 g h 30 2010 k 51 50 d x y o = irlt s 6342t rpbf p = irf t s 8342t rpbf s = irlt s 2242t rpbf r = irf t s 9342t rpbf

8 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2011 data and specifications subject to change without notice. ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release.

ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes tsop-6 qualification information ? moisture sensitivity level qualification level cons umer ?? (per je dec jes d47f ??? guidelines )

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